High-power Density W-band MMIC Amplifiers using Graded-channel GaN HEMTs

We report the W-band amplifier performance of graded-channel GaN HEMTs with f T and f MAX of 170 GHz and 347 GHz, respectively. Graded-channel GaN HEMTs with a gate periphery of 0.15 mm show a peak power-added-efficiency of 50% at 94 GHz at 2.2 W/mm associated power density after deembedding of the...

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Published in2023 IEEE/MTT-S International Microwave Symposium - IMS 2023 pp. 97 - 100
Main Authors Moon, Jeong-Sun, Grabar, Bob, Wong, Joel, Tai, Joe, Ramos, Ignacio, Arkun, Erdem, Dao, Chuong, Fanning, Dave, Miller, Nicholas C., Elliott, Michael, Gilbert, Ryan, Venkatesan, Nivedhita, Fay, Patrick
Format Conference Proceeding
LanguageEnglish
Published IEEE 11.06.2023
Subjects
communications
Density measurement
GaN
HEMTs
Logic gates
Microwave amplifiers
Microwave communication
mm-wave
MMIC
Power amplifiers
Power system measurements
W-band
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Summary:We report the W-band amplifier performance of graded-channel GaN HEMTs with f T and f MAX of 170 GHz and 347 GHz, respectively. Graded-channel GaN HEMTs with a gate periphery of 0.15 mm show a peak power-added-efficiency of 50% at 94 GHz at 2.2 W/mm associated power density after deembedding of the matching network loss of 0.3 dB. Pre-matched power cells with 0.6 mm total gate periphery yielded 2.1 W output power and 3.5 W/mm power density at 94 GHz. Finally, we report three-stage W-band amplifiers with a peak gain of 22.5 dB at 92.5 GHz, yielding 7.5 dB gain per stage.
ISSN:2576-7216
DOI:10.1109/IMS37964.2023.10188089