Load-line Dependent Current Filament Dynamics in N anoscale SCR Devices

In this paper physics of experimentally observed abnormal behavior in STI bounded Silicon-Controlled-Rectifier (SCR) structures is investigated and explained using basic principles and 3D electrothermal TCAD simulations. The SCR device is found to show pulse to pulse instability in the negative resi...

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Bibliographic Details
Published in2024 IEEE International Reliability Physics Symposium (IRPS) pp. 1 - 6
Main Authors Goyal, Mitesh, Chaturvedi, Mukesh, Kumar, Raju, Vaidya, Mahesh, Shrivastava, Mayank
Format Conference Proceeding
LanguageEnglish
Published IEEE 14.04.2024
Subjects
Current Filamentation
Current measurement
Electrical resistance measurement
Electrostatic discharges
ESD device Physics
ESD SCR
Load Dependence in ESD
Scalability
Snapback in ESD protection devices
Solid modeling
Three-dimensional displays
Thyristors
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Summary:In this paper physics of experimentally observed abnormal behavior in STI bounded Silicon-Controlled-Rectifier (SCR) structures is investigated and explained using basic principles and 3D electrothermal TCAD simulations. The SCR device is found to show pulse to pulse instability in the negative resistance (snapback) region during the lOOns pulse width TLP measurement. The instabilities were independent of SCR geometrical design variations but were dependent on the load line conditions used in the TLP measurement. The physical insights and device physics has been explored using well calibrated 3 D process and device TCAD.
ISSN:1938-1891
DOI:10.1109/IRPS48228.2024.10529351