Scaling the SOT track - A path towards maximizing efficiency in SOT-MRAM

We demonstrate, for the first time, the functionality of a scaled perpendicular spin-orbit torque (SOT)-MRAM where the SOT layer and magnetic tunnel junction (MTJ) pillar exhibit comparable dimensions. This novel design leads to a significant reduction in the power consumption (63% decrease), an enh...

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Bibliographic Details
Published in2023 International Electron Devices Meeting (IEDM) pp. 1 - 4
Main Authors Van Beek, S., Cai, K., Yasin, F., Hody, H., Talmelli, G., Nguyen, V.D., Vergel, N. Franchina, Palomino, A., Trovato, A., Wostyn, K., Rao, S., Kar, G.S., Couet, S.
Format Conference Proceeding
LanguageEnglish
Published IEEE 09.12.2023
Subjects
Magnetic tunneling
Performance evaluation
Power demand
Size measurement
Stress measurement
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Summary:We demonstrate, for the first time, the functionality of a scaled perpendicular spin-orbit torque (SOT)-MRAM where the SOT layer and magnetic tunnel junction (MTJ) pillar exhibit comparable dimensions. This novel design leads to a significant reduction in the power consumption (63% decrease), an enhancement in endurance (>10 15 cycles), and a reduction in bit-cell area. Systematic investigations on device scaling are performed, highlighting the importance of SOT track scaling as a path to enhance the device performance by eliminating power consumption outside the MTJ pillar region. Furthermore, the hybrid free layer stack design offers a potential solution for scaling MTJ dimensions, as it enables low switching current and sufficient retention down to 20 nm.
ISSN:2156-017X
DOI:10.1109/IEDM45741.2023.10413749