Robust Polycrystalline 3C-Sic-on-Si Heterostructures with Low CTE Mismatch up to 900 °C for MEMS

In this paper we present for the first time polycrystalline cubic silicon carbide on monocrystalline silicon (3C-SiC-on-Si) heterostructures with very low coefficient of thermal expansion (CTE) mismatch at temperatures up to 900 °C. The use of different gas flow rates with alternating supply deposit...

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Bibliographic Details
Published in2023 IEEE 36th International Conference on Micro Electro Mechanical Systems (MEMS) pp. 590 - 593
Main Authors Moll, Philipp, Pfusterschmied, Georg, Schmid, Ulrich
Format Conference Proceeding
LanguageEnglish
Published IEEE 15.01.2023
Subjects
3C-SiC
CTE mismatch
Fluid flow
LPCVD
Micromechanical devices
Silicon
Temperature measurement
Temperature sensors
Thermal expansion
thermal stress
Vibrations
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Summary:In this paper we present for the first time polycrystalline cubic silicon carbide on monocrystalline silicon (3C-SiC-on-Si) heterostructures with very low coefficient of thermal expansion (CTE) mismatch at temperatures up to 900 °C. The use of different gas flow rates with alternating supply deposition (ASD) in a low-pressure chemical vapor deposition (LPCVD) system allows to tailor the CTE of the 3C-SiC thin films, resulting in thermal stress levels as low as 175 MPa at 900 °C (~300 MPa intrinsic stress at room temperature). This achievement unlocks robust 3C-SiC/Si interfaces for high temperature micro electromechanical systems (MEMS) applications by overcoming the well-known CTE mismatch of ~9 % between Si and 3C-SiC.
ISSN:2160-1968
DOI:10.1109/MEMS49605.2023.10052144