Development of High-Density Metal-Insulator-Metal Capacitors with Top and Side Contacts

• Published in: 2023 34th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) pp. 1 - 3
• Main Authors: Xu, Dewei, Chen, Junyang, Koh, Jimmy, Motoyama, Emiko, Rajachidambaram, Meena, Fakhoury, Jean Raymond, Kamlapurkar, Radhika, Gantt, Rachel, Palmieri, Daniel, Alexander, J. Nicholas, Korevaar, Bas, Gordon, Edward, Kauerauf, Thomas, Tang, Teck Jung, Fox, Robert, Kook, Seung-Yeop, Hu, Owen
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.05.2023
• Subjects: BEOL; Capacitors; Double-cantilever bending (DCB); Electrodes; high-k dielectrics; metal-insulator-metal (MIM) capacitor; MIM capacitors; Modified edge lift-off test (MELT); Reliability engineering; Semiconductor device manufacture; Semiconductor device reliability; Single pillar shear test (SPST); Time-dependent-dielectric-breakdown (TDDB); Tin
• ISSN: 2376-6697
• DOI: 10.1109/ASMC57536.2023.10121096

This paper presents newly developed four-plate MIM capacitors with both top and side contacts; atomic layer deposited HfO 2 -Al 2 O 3 high-k dielectrics with PVD TiN electrodes; capacitor density > 70 fF/μm 2 with reliability requirement of Vmax > 1.98 V; Wafer level mechanical strength assessment (MELT/DCB/SPST). With further high-k dielectric engineering, MIM capacitors are achieved with capacitor density of 86 fF/μm 2 or Vmax > 2.75 V. The enablement of these four-plate MIM capacitors empowers GlobalFoundries a full spectrum of up to date MIM offerings with both top and side contacts, in addition to existing general two-plate and more advanced three-plate MIM capacitors.