Pressure mediated release of hydrogen from silicon co-implanted with H2+ and He

• Published in: Physica status solidi. C Vol. 4; no. 6; pp. 2011 - 2015
• Main Authors: Misiuk, Andrzej, Barcz, Adam
• Format: Journal Article
• Language: English
• Published: Berlin WILEY-VCH Verlag 01.05.2007; WILEY‐VCH Verlag
• Subjects: 61.43.Gt; 61.72.Tt; 82.80.Ms
• ISSN: 1862-6351; 1610-1634; 1610-1642
• DOI: 10.1002/pssc.200674354

Hydrogen out‐diffusion from porous‐like buried layers prepared in single crystalline Si by implantation with hydrogen (Si:H) or hydrogen and helium (Si:H, He) depends, among others, on the sequence of layers enriched with H and He and on implantation conditions. Hydrogen loss at 720–920 K decreases, increases or does not depend on hydrostatic pressure of ambient (HP, up to 1.1 GPa). This unusual effect is related to specific microstructure of Si:H, He induced under HP and to the He‐mediated energy of creation of vacancies as well as of the strength of H–Si bonds. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)