A 433 MHz e-GaN HEMT based Power Oscillator for Far Field Wireless Power Transfer

This paper presents a power oscillator design based on a class E power amplifier. The enhancement GaN HEMT is used for its fast switching time, low ON resistance and low temperature sensitivity. The presented circuit is designed to be used in far field wireless charging which is the 2 nd generation...

Full description

Saved in:
Bibliographic Details
Published in2020 8th International Japan-Africa Conference on Electronics, Communications, and Computations (JAC-ECC) pp. 80 - 83
Main Authors Rezk, Theodora M., Fahmy, Ghazal A., Ibrahim, Sameh A., Ragai, Hani F.
Format Conference Proceeding
LanguageEnglish
Published IEEE 14.12.2020
Subjects
class E power amplifier (PA)
e-GaN HEMT
HEMTs
Oscillators
Power amplifiers
Power generation
power oscillator (PO)
Temperature sensors
Transistors
Wireless power transfer
wireless power transfer (WPT)
Online AccessGet full text

Cover

More Information
Summary:This paper presents a power oscillator design based on a class E power amplifier. The enhancement GaN HEMT is used for its fast switching time, low ON resistance and low temperature sensitivity. The presented circuit is designed to be used in far field wireless charging which is the 2 nd generation in this type of chargers. The simulated output power of the power oscillator is 24.9 W at the ISM band of 433 MHz. Effect of design parameter variability is also studied.
DOI:10.1109/JAC-ECC51597.2020.9355883