A 433 MHz e-GaN HEMT based Power Oscillator for Far Field Wireless Power Transfer
This paper presents a power oscillator design based on a class E power amplifier. The enhancement GaN HEMT is used for its fast switching time, low ON resistance and low temperature sensitivity. The presented circuit is designed to be used in far field wireless charging which is the 2 nd generation...
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Published in | 2020 8th International Japan-Africa Conference on Electronics, Communications, and Computations (JAC-ECC) pp. 80 - 83 |
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Main Authors | , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
14.12.2020
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Subjects | |
Online Access | Get full text |
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Summary: | This paper presents a power oscillator design based on a class E power amplifier. The enhancement GaN HEMT is used for its fast switching time, low ON resistance and low temperature sensitivity. The presented circuit is designed to be used in far field wireless charging which is the 2 nd generation in this type of chargers. The simulated output power of the power oscillator is 24.9 W at the ISM band of 433 MHz. Effect of design parameter variability is also studied. |
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DOI: | 10.1109/JAC-ECC51597.2020.9355883 |