Control of a Hybrid IGBT-SiC Inverter

A novel inverter topology built from a combination of 1.2 kV (standard) IGBTs and SiC-MOSFETs has an attraction for power applications. It consists of twelve controllable semiconductor devices per phase, contained in two identical modules. The complexity of this arrangement requires a coordinated co...

Full description

Saved in:
Bibliographic Details
Published in2019 2nd International Conference on Smart Grid and Renewable Energy (SGRE) pp. 1 - 6
Main Authors Krah, Jens Onno, Holtz, Joachim, Sahan, Benjamin
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.11.2019
Subjects
Commutation
Insulated gate bipolar transistors
Inverters
Silicon carbide
Surges
Switches
Switching frequency
Online AccessGet full text

Cover

More Information
Summary:A novel inverter topology built from a combination of 1.2 kV (standard) IGBTs and SiC-MOSFETs has an attraction for power applications. It consists of twelve controllable semiconductor devices per phase, contained in two identical modules. The complexity of this arrangement requires a coordinated commutation which is the subject of this paper. Concatenated state machines are used for this purpose. Extremely low harmonic content of the output voltage is obtained by interleaved pulsewidth control of two three-level inverter modules per phase. The IGBTs operate uniquely in a soft commutation mode which leads to unprecedented efficiency.
DOI:10.1109/SGRE46976.2019.9021063