Low Temperature Oxide Passivation for Via-last/backside process

Plasma Enhanced Chemical Vapour Deposition (PECVD) is a widely used passivation process to obtain quality thin films at substrate temperature typically ranging from 150^{\circ} \mathrm{C} to 400^{\circ} \mathrm{C}. PECVD passivation was developed with a low process temperature \lt 120^{\circ} \mathr...

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Bibliographic Details
Published in2021 IEEE 23rd Electronics Packaging Technology Conference (EPTC) pp. 637 - 641
Main Authors Boon, Serine Soh Siew, Ho, Soon Wee, Bin, Wang Zong, Keat, Chia Ching
Format Conference Proceeding
LanguageEnglish
Published IEEE 07.12.2021
Subjects
Adhesives
Current measurement
Plasma temperature
Temperature measurement
Temperature sensors
Viscosity
Voltage measurement
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Summary:Plasma Enhanced Chemical Vapour Deposition (PECVD) is a widely used passivation process to obtain quality thin films at substrate temperature typically ranging from 150^{\circ} \mathrm{C} to 400^{\circ} \mathrm{C}. PECVD passivation was developed with a low process temperature \lt 120^{\circ} \mathrm{C} for temporary bonded wafers, for Via-last/backside process. Thermoplastic adhesives are used to bonded substrates to the carriers; for thinned wafers processing. Bonding adhesives are very sensitive to process temperature due to their thermoplastic behaviour, becoming more fluidic with increasing temperature. The reducing in adhesive viscosity can results in voids and delamination in the adhesive interface causing process failures. This paper discusses the application of a low temperature application of PECVD oxide liner for through silicon via (TSV) process. The low temperature TSV liner coverage and electrical performance were characterized.
DOI:10.1109/EPTC53413.2021.9663931