Base Switch Element with Increased Reliability for High-Voltage Power Converters

The paper considers the task of development of energy efficient, reliable power semiconductor switches for power high-voltage converters. A method of increasing the maximum rated voltage of the switch, which does not lead to the increase of its static and dynamic losses has been suggested. A switch...

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Bibliographic Details
Published in2020 27th International Workshop on Electric Drives: MPEI Department of Electric Drives 90th Anniversary (IWED) pp. 1 - 5
Main Authors Dukhnich, Elena, Voronin, Igor, Osipov, Oleg
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.01.2020
Subjects
Capacitance
Ceramics
converters
energy efficiency
insulated gate bipolar transistors
MOSFET
Oscillators
power semiconductor switches
Switches
Switching circuits
switching converters
thyristors
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Summary:The paper considers the task of development of energy efficient, reliable power semiconductor switches for power high-voltage converters. A method of increasing the maximum rated voltage of the switch, which does not lead to the increase of its static and dynamic losses has been suggested. A switch topology with an improved robustness of blocking properties maintenance at transient processes of switching a load current has been proposed. A method of increasing the reliability of the proposed switches through using the internal parameters of the power modules instead of external leaded passive components has been proposed.
DOI:10.1109/IWED48848.2020.9069548