Bulk lifetime study of p-type Czochralski silicon with different processing history using quinhydrone-methanol surface passivation

The bulk lifetimes of p-type textured Cz-Si wafers with different thermal processing history were assessed using quinhydrone-methanol (QH-MeOH) surface passivation. The wafer bulk quality quantified by effective carrier lifetime ( \tau_{\text{eff}} ) and implied voltage (iVoc) depends on the thermal...

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Bibliographic Details
Published in2022 IEEE 49th Photovoltaics Specialists Conference (PVSC) pp. 1 - 4
Main Authors Mouri, Tasnim K., Upadhyaya, Ajay, Rohatgi, Ajeet, Shafarman, William N, Das, Ujjwal K.
Format Conference Proceeding
LanguageEnglish
Published IEEE 05.06.2022
Subjects
bulk lifetime
Charge carrier lifetime
Fluid flow
History
hydrogen sulfide reaction
p-type silicon
Photovoltaic systems
quinhydrone methanol passivation
Silicon
surface passivation
Surface texture
Temperature measurement
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Summary:The bulk lifetimes of p-type textured Cz-Si wafers with different thermal processing history were assessed using quinhydrone-methanol (QH-MeOH) surface passivation. The wafer bulk quality quantified by effective carrier lifetime ( \tau_{\text{eff}} ) and implied voltage (iVoc) depends on the thermal processing of different surface treatment and passivation materials. It was observed that wafers which had H 2 S reaction at 550°C demonstrated higher \tau_{\text{eff}}=235\ \mu\mathrm{s} and \text{iV}_{\text{oc}}=693\ \text{mV} implying bulk quality improvement after the H 2 S reaction process.
DOI:10.1109/PVSC48317.2022.9938829