A High Output Power 1V Charge Pump and Power Switch for Configurable, In-Field-Programmable Metal eFuse on Intel 4 Logic Technology
A flexible, low-cost design solution for In-Field-Programmable (IFP) metal eFuse is presented. The design maximizes fuse yield through a tunable program voltage provided by a two-stage charge pump (CP), placed in closed-loop (CL) with a low dropout regulator (LDO). The integration of CP and LDO solv...
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Published in | 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) pp. 136 - 137 |
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Main Authors | , , , , , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
12.06.2022
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Subjects | |
Online Access | Get full text |
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Summary: | A flexible, low-cost design solution for In-Field-Programmable (IFP) metal eFuse is presented. The design maximizes fuse yield through a tunable program voltage provided by a two-stage charge pump (CP), placed in closed-loop (CL) with a low dropout regulator (LDO). The integration of CP and LDO solves electrical over-stress (EOS) concerns, and achieves stability and low voltage operation through several design innovations, and does not require a specific power sequence or MIM cap. This design is implemented and characterized on Intel 4 technology, where >99.9% successful fuse bit program was measured across [-40C, 125C] temperature, and down to 0.95V. |
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ISSN: | 2158-9682 |
DOI: | 10.1109/VLSITechnologyandCir46769.2022.9830275 |