A High Output Power 1V Charge Pump and Power Switch for Configurable, In-Field-Programmable Metal eFuse on Intel 4 Logic Technology

A flexible, low-cost design solution for In-Field-Programmable (IFP) metal eFuse is presented. The design maximizes fuse yield through a tunable program voltage provided by a two-stage charge pump (CP), placed in closed-loop (CL) with a low dropout regulator (LDO). The integration of CP and LDO solv...

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Bibliographic Details
Published in2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) pp. 136 - 137
Main Authors Hutchins, Stafford, Li, Jiabo, Sanne, Atresh, Chen, Zhanping, Hasan, Mohammad M., Bhattacharya, Uddalak, Karl, Eric, Kulkarni, Jaydeep P.
Format Conference Proceeding
LanguageEnglish
Published IEEE 12.06.2022
Subjects
charge pump
Charge pumps
Fuses
metal fuse
Metals
OTP-ROM
Regulators
Technological innovation
Temperature measurement
Very large scale integration
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Summary:A flexible, low-cost design solution for In-Field-Programmable (IFP) metal eFuse is presented. The design maximizes fuse yield through a tunable program voltage provided by a two-stage charge pump (CP), placed in closed-loop (CL) with a low dropout regulator (LDO). The integration of CP and LDO solves electrical over-stress (EOS) concerns, and achieves stability and low voltage operation through several design innovations, and does not require a specific power sequence or MIM cap. This design is implemented and characterized on Intel 4 technology, where >99.9% successful fuse bit program was measured across [-40C, 125C] temperature, and down to 0.95V.
ISSN:2158-9682
DOI:10.1109/VLSITechnologyandCir46769.2022.9830275