An over 200-W output power GaN HEMT push-pull amplifier with high reliability

We describe a state-of-the-art 250-W output power AlGaN/GaN HEMT push-pull transmitter amplifier operated at a drain bias voltage of 50 V. We also demonstrated stable operation under RF stress testing for 1000 h at a drain bias voltage of 60 V, for the first time. The amplifier, combined with a digi...

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Bibliographic Details
Published in2004 IEEE MTT-S International Microwave Symposium Vol. 3; pp. 1347 - 1350 Vol.3
Main Authors Kikkawa, T., Maniwa, T., Hayashi, H., Kanamura, M., Yokokawa, S., Nishi, M., Adachi, N., Yokoyama, M., Tateno, Y., Joshin, K.
Format Conference Proceeding
LanguageEnglish
Published Piscataway NJ IEEE 2004
Subjects
Aluminum gallium nitride
Amplifiers
Applied sciences
Circuit properties
Electric, optical and optoelectronic circuits
Electronic circuits
Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
Electronics
Exact sciences and technology
Gallium nitride
HEMTs
High power amplifiers
Multiaccess communication
Power amplifiers
Power generation
Radiocommunications
Radiofrequency amplifiers
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Telecommunications
Telecommunications and information theory
Transistors
Transmitters
Transmitters. Receivers
Voltage
State of the art
Output power
Electric stress
Wireless telecommunication
Transmitter
Wide band transmission
Power supply
Amplifier
Adjacent channel
Radiofrequency
High electron mobility transistor
Push pull connection
Bias voltage
Code division multiple access
Drain voltage
Reliability
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Summary:We describe a state-of-the-art 250-W output power AlGaN/GaN HEMT push-pull transmitter amplifier operated at a drain bias voltage of 50 V. We also demonstrated stable operation under RF stress testing for 1000 h at a drain bias voltage of 60 V, for the first time. The amplifier, combined with a digital pre-distortion (DPD) system, also achieved an adjacent channel leakage power ratio (ACLR) of less than -50 dBc for 1-carrier W-CDMA signals with a drain supply voltage of 50 V. We show, for the first time, that an AlGaN/GaN HEMTs push-pull amplifier can fulfill the requirements of W-CDMA systems.
ISBN:0780383311
9780780383319
ISSN:0149-645X
DOI:10.1109/MWSYM.2004.1338818