An ultra-high power amplifier and switch arrays on single wafer

• Published in: 2004 IEEE MTT-S International Microwave Symposium Vol. 2; pp. 1013 - 1016 Vol.2
• Main Authors: Guo, J., Tantawi, S.G.
• Format: Conference Proceeding
• Language: English
• Published: Piscataway NJ IEEE 2004
• Subjects: Amplifiers; Applied sciences; Circuit properties; Electric, optical and optoelectronic circuits; Electronic circuits; Electronics; Exact sciences and technology; Linear particle accelerator; Microwave amplifiers; Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits; Power amplifiers; Power semiconductor switches; Radio frequency; Radiofrequency amplifiers; Semiconductor devices; Semiconductor diodes; Semiconductor waveguides; Switching, multiplexing, switched capacity circuits; Waveguide discontinuities; State of the art; Unit production; High Q factor; X band; Microwave; Centimetric wave; Waveguide; TE mode; Implementation; Semiconductor device; Cavity; Selector switch; Power amplifier; Circular waveguide; Wafer
• ISBN: 0780383311; 9780780383319
• ISSN: 0149-645X
• DOI: 10.1109/MWSYM.2004.1339153

A novel X-band single wafer amplifier and switch arrays are designed to work in a high Q circular waveguide cavity. This design can significantly reduce power leakage at the plane where the wafer is inserted, which is essential to achieve high Q and ultrahigh power. The array is achieved in an overmoded circular waveguide. The mode being exited and/or controlled by the array is the TE/sub 01/ mode. We hope that the use of an overmoded waveguide and the TE/sub 01/ mode would allow us to extend the power handling capabilities of the device by orders of magnitude beyond the state-of-the-art for semiconductor devices. We present the general design of the array and show several implementations.