A 1∼4GHz Tri-Directional RF Amplifier Based on CMOS Technology for Digital Array Radars

This paper presents A 1 to 4 GHz tri-directional RF amplifier based on 0.18um technology for digital array radar applications. A wideband matching from 1 to 4 GHz at RF port is achieved while the circuit is working in both TX and RX mode. The circuits consist of a variable gain low noise amplifier,...

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Bibliographic Details
Published in2020 IEEE 5th International Conference on Integrated Circuits and Microsystems (ICICM) pp. 134 - 137
Main Authors Wu, Bowen, Duan, Zongming, Wang, Yan, Lv, Wei
Format Conference Proceeding
LanguageEnglish
Published IEEE 23.10.2020
Subjects
CMOS
Gain
Microwave amplifiers
Microwave antenna arrays
Microwave integrated circuits
MMIC
Radar
Radio frequency
Simulation
UWB
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Summary:This paper presents A 1 to 4 GHz tri-directional RF amplifier based on 0.18um technology for digital array radar applications. A wideband matching from 1 to 4 GHz at RF port is achieved while the circuit is working in both TX and RX mode. The circuits consist of a variable gain low noise amplifier, a drive amplifier and a single pole double throw switch. The circuit shows gain from 7.6 to 14.2 dB, and the noise figure is less than 5.3 dB with −3dBm@2.4GHz input P-1dB compression point in RX, while gain of 9.9dB and output P-1dB compression point is 11.4dBm@2.4GHz in TX. The chip size is 2.25mm*0.97mm (with pads).
DOI:10.1109/ICICM50929.2020.9292302