Energy Barrier Layers and Internal Optical Loss in 1400-1600 nm Semiconductor Lasers

We investigated the effect of AlInAs energy barrier layers on the edge-emitting lasers of 1400-1600 nm spectral range. It was shown that the barrier layer at the waveguide-cladding heterojunction provides charge carrier accumulation in the waveguide and prevents the internal quantum efficiency from...

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Bibliographic Details
Published in2020 International Conference Laser Optics (ICLO) p. 1
Main Authors Veselov, D. A., Bobretsova, Yu. K., Rastegaeva, M. G., Voronkova, N. V., Ladugin, M. A., Ryaboshtan, Yu. L., Marmalyuk, A. A., Slipchenko, S. O., Pikhtin, N. A.
Format Conference Proceeding
LanguageEnglish
Published IEEE 02.11.2020
Subjects
AlGaInAs/InP
energy barriers
internal optical loss
semiconductor laser
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Summary:We investigated the effect of AlInAs energy barrier layers on the edge-emitting lasers of 1400-1600 nm spectral range. It was shown that the barrier layer at the waveguide-cladding heterojunction provides charge carrier accumulation in the waveguide and prevents the internal quantum efficiency from drop. The use of barrier layer enables increasing the pulse optical power from 9 to 13 W from 100 μm aperture.
ISBN:9781728152325
1728152321
ISSN:2642-5580
DOI:10.1109/ICLO48556.2020.9285412