Test structures for ISFET chemical sensors

Simple test structures and measurements were studied for determining their usefulness for the online monitoring of the aging effects on pH ion sensitive field effect transistor (ISFET) chemical sensors used in automatic systems. Devices consisted of long drain and field transistors and metallic mean...

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Published inICMTS 92 Proceedings of the 1992 International Conference on Microelectronic Test Structures pp. 156 - 159
Main Authors Gracia, I., Cane, C., Lozano, M., Esteve, J.
Format Conference Proceeding Journal Article
LanguageEnglish
Published IEEE 1992
Subjects
Aging
Automatic testing
Capacitance measurement
Chemical sensors
Computerized monitoring
FETs
Instruments
Measurement standards
System testing
Temperature sensors
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Summary:Simple test structures and measurements were studied for determining their usefulness for the online monitoring of the aging effects on pH ion sensitive field effect transistor (ISFET) chemical sensors used in automatic systems. Devices consisted of long drain and field transistors and metallic meanders. Current and capacitance measurements were carried out with standard instruments. Results showed that not all the test structures and their related parameters were equally sensitive, and in some cases tests at a high temperature were necessary to accelerate the desired effects. The metallic meander structure proved to be quite sensitive to epoxy-coating degradation. For dielectric passivating layers, the parasitic transistors also showed sensitivity, especially when electrolyte was heated.< >
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
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ISBN:9780780305359
0780305353
DOI:10.1109/ICMTS.1992.185959