The Threshold Voltage Degradation of MOSFET in Heavy-ion Single Event Effect Test
A degradation is studied that the gate-source threshold voltage of BSS138BK N-channel MOSFET decreased dramatically in heavy-ion single event effect test. The comparative study is performed by laser test, total ionizing dose test and no-irradiation room temperature test. This case study illustrate t...
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Published in | 2018 International Conference on Radiation Effects of Electronic Devices (ICREED) pp. 1 - 4 |
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Main Authors | , , , , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
01.05.2018
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Subjects | |
Online Access | Get full text |
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Summary: | A degradation is studied that the gate-source threshold voltage of BSS138BK N-channel MOSFET decreased dramatically in heavy-ion single event effect test. The comparative study is performed by laser test, total ionizing dose test and no-irradiation room temperature test. This case study illustrate the parameter degradation process, comparative test results and the analysis. |
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DOI: | 10.1109/ICREED.2018.8905067 |