The Threshold Voltage Degradation of MOSFET in Heavy-ion Single Event Effect Test

A degradation is studied that the gate-source threshold voltage of BSS138BK N-channel MOSFET decreased dramatically in heavy-ion single event effect test. The comparative study is performed by laser test, total ionizing dose test and no-irradiation room temperature test. This case study illustrate t...

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Bibliographic Details
Published in2018 International Conference on Radiation Effects of Electronic Devices (ICREED) pp. 1 - 4
Main Authors Zhang, Zeming, Ma, Yingqi, Li, Dan, Tong, Chao, Guo, Xiaoxiao, Han, Jianwei, Dang, Wei
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2018
Subjects
MOSFET
parameter degradation
single event effect
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Summary:A degradation is studied that the gate-source threshold voltage of BSS138BK N-channel MOSFET decreased dramatically in heavy-ion single event effect test. The comparative study is performed by laser test, total ionizing dose test and no-irradiation room temperature test. This case study illustrate the parameter degradation process, comparative test results and the analysis.
DOI:10.1109/ICREED.2018.8905067