Pure CMOS embedded Artificial Synaptic Device (eASD) for High Density Neuromorphic Computing Chip

An embedded Artificial Synaptic Device (eASD) featuring high-performance and high-density characteristics with n-MOSFET's high-k layer as memristive switching pairs in pure 28nm CMOS process is firstly proposed. Taking the advantages of reliable output constructed by complementary memristance s...

Full description

Saved in:
Bibliographic Details
Published in2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) pp. 1 - 2
Main Authors Yu, Hsin-Yuan, Huang, Yao-Hung, Chih, Yue-Der, Chang, Jonathan, King, Ya-Chin, Lin, Chrong Jung
Format Conference Proceeding
LanguageEnglish
Published IEEE 18.04.2022
Subjects
CMOS process
Layout
Neuromorphic engineering
Performance evaluation
Three-dimensional displays
Voltage
Writing
Online AccessGet full text

Cover

More Information
Summary:An embedded Artificial Synaptic Device (eASD) featuring high-performance and high-density characteristics with n-MOSFET's high-k layer as memristive switching pairs in pure 28nm CMOS process is firstly proposed. Taking the advantages of reliable output constructed by complementary memristance states, the novel artificial synaptic device fully compatible to CMOS process is promising to be implemented in the neuromorphic AI computing chip for the coming high-speed neural network system.
DOI:10.1109/VLSI-TSA54299.2022.9771034