A 0.5 V 200 MHz 1-stage 32 b ALU using a body bias controlled SOI pass-gate logic

SOI CMOS with gate-body connection (DTMOS) and body bias controlled SOI pass-gate logic (BCSOI pass-gate) take advantage of individually isolated SOI device active area and reduce threshold voltage by controlling each device body bias. Hence, they enjoy higher speed than circuits based on fixed low...

Full description

Saved in:
Bibliographic Details
Published in1997 IEEE International Solids-State Circuits Conference. Digest of Technical Papers Vol. 40; pp. 286 - 287
Main Authors Fuse, T., Oowaki, Y., Yamada, T., Kamoshida, M., Ohta, A., Shino, T., Kawanaka, S., Terauchi, M., Yoshida, T., Matsubara, G., Yoshioka, S., Watanabe, S., Yoshimi, M., Ohuchi, K., Manabe, S.
Format Conference Proceeding Journal Article
LanguageEnglish
Published IEEE 01.01.1997
Subjects
Capacitance
Circuit testing
CMOS logic circuits
Energy consumption
Leakage current
Logic devices
MOS devices
Threshold voltage
Voltage control
Voltage-controlled oscillators
Online AccessGet full text

Cover

More Information
Summary:SOI CMOS with gate-body connection (DTMOS) and body bias controlled SOI pass-gate logic (BCSOI pass-gate) take advantage of individually isolated SOI device active area and reduce threshold voltage by controlling each device body bias. Hence, they enjoy higher speed than circuits based on fixed low threshold voltage. The direct body bias control used in previous work suffers from leakage current at supply voltage higher than 0.8V due to drain-body junction leakage. A practical circuit technology that offers the highest speed, lowest operation voltage and stable operation under wide supply voltage demonstrates performance with an ALU macro using this technology.
Bibliography:SourceType-Scholarly Journals-2
ObjectType-Feature-2
ObjectType-Conference Paper-1
content type line 23
SourceType-Conference Papers & Proceedings-1
ObjectType-Article-3
ISBN:9780780337213
0780337212
ISSN:0193-6530
2376-8606
DOI:10.1109/ISSCC.1997.585387