Quantitative Discussion on Sensitivity to Terahertz Waves of Detectors Made of MOSFET and High-Electron Mobility Transistor

A newly developed circuit model is presented to describe detection characteristic of square law detectors made of an FET under non-quasistatic condition. Sensing performance calculated using formulae derived from the model agrees well with results of experiment carried out to detect 1.0 THz waves us...

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Bibliographic Details
Published in2019 7th International Japan-Africa Conference on Electronics, Communications, and Computations, (JAC-ECC) pp. 128 - 131
Main Authors Kojima, Hiromu, Kanaya, Haruichi, Asano, Tanemasa
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.12.2019
Subjects
HEMT
imaging
InGaAs
MOSFET
non-quasi static
sensitivity
square law detector
terahertz
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Summary:A newly developed circuit model is presented to describe detection characteristic of square law detectors made of an FET under non-quasistatic condition. Sensing performance calculated using formulae derived from the model agrees well with results of experiment carried out to detect 1.0 THz waves using InAs-channel high-electron mobility transistor (HEMT). The model predicts that HEMT offers much higher voltage sensitivity to terahertz waves than Si MOSFET even for miniaturized devices.
DOI:10.1109/JAC-ECC48896.2019.9051237