BPFET-based RF electronics: state-of-the-art, small-signal modeling and amplifier design

Black phosphorus (BP) field-effect transistors (FET) have been proposed as a two-dimensional channel device technology able to operate in radiofrequency (RF) applications. A revision of the high-frequency figures of merit of fabricated BPFETs is provided here. Experimentally-calibrated small-signal...

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Bibliographic Details
Published in2020 IEEE MTT-S Latin America Microwave Conference (LAMC 2020) pp. 1 - 4
Main Authors Valdez-Sandoval, Leslie, Pacheco-Sanchez, Anibal, Jimenez, David, Ramirez-Garcia, Eloy
Format Conference Proceeding
LanguageEnglish
Published IEEE 26.05.2021
Subjects
BPFET
Conferences
Field effect transistors
Microwave amplifiers
Microwave FETs
Phosphorus
Radio frequency
RF amplifier
small-signal model
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Summary:Black phosphorus (BP) field-effect transistors (FET) have been proposed as a two-dimensional channel device technology able to operate in radiofrequency (RF) applications. A revision of the high-frequency figures of merit of fabricated BPFETs is provided here. Experimentally-calibrated small-signal models of state-of-the-art RF BPFETs have been used to design single- and double-stage amplifiers at 2.4 GHz. Results show that BPFET-based amplifiers are strong candidates for low-power high-selective RF systems.
DOI:10.1109/LAMC50424.2021.9601637