Edge Breakdown Suppression of Avalanche Photodiodes using Zn Diffusion and Selective Area Growth

Avalanche photodiodes are fabricated and characterized, using a single diffusion fabrication process with the surface patterned by selective area growth prior to diffusion. Raster mapping of the photocurrent near the breakdown voltage is used to characterize the electric field distribution in the mu...

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Bibliographic Details
Published in2019 IEEE Photonics Conference (IPC) pp. 1 - 6
Main Authors Salehzadeh, O., Bonneville, G., Pitts, O. J., Thorpe, A. J. Spring
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.09.2019
Subjects
Avalanche photodiodes
Dark current
Diffusion
Doping
Electric breakdown
Materials preparation
Optoelectronic and Photonic sensors
Semiconductor detectors
Silicon
Surface morphology
Surface treatment
Zinc
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Summary:Avalanche photodiodes are fabricated and characterized, using a single diffusion fabrication process with the surface patterned by selective area growth prior to diffusion. Raster mapping of the photocurrent near the breakdown voltage is used to characterize the electric field distribution in the multiplication layer. Devices fabricated with the precursor CBrCl 3 introduced during selective area epitaxy show a smoother surface morphology and effective edge breakdown suppression, while those fabricated without CBrCl 3 have a rougher surface morphology and exhibit evidence of premature edge breakdown at the corners of the device along specific crystal orientations. Comparison of the dark current - voltage curves below breakdown shows a reduction of dark current associated with the use of CBrCl 3 , as well as with the inclusion of floating guard rings in the device design.
ISSN:2575-274X
DOI:10.1109/IPCon.2019.8908476