Low temperature PECVD deposited Silicon Nitride grating couplers with high efficiency
We report and demonstrate high efficiency grating couplers on PECVD deposited Silicon Nitride films. The couplers were fabricated on a 400 nm thick film that was embedded in a SiO 2 cladding. The experimentally measured coupling efficiency was −5.6 dB per coupler for gratings on a Silicon substrate...
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Published in | 2019 Workshop on Recent Advances in Photonics (WRAP) pp. 1 - 3 |
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Main Authors | , , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
01.12.2019
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Subjects | |
Online Access | Get full text |
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Summary: | We report and demonstrate high efficiency grating couplers on PECVD deposited Silicon Nitride films. The couplers were fabricated on a 400 nm thick film that was embedded in a SiO 2 cladding. The experimentally measured coupling efficiency was −5.6 dB per coupler for gratings on a Silicon substrate and −2.58 dB per coupler for gratings with a bottom Bragg reflector. The reported efficiencies are comparable to similarly deposited stacks using LPCVD based processes. |
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DOI: | 10.1109/WRAP47485.2019.9013733 |