Low temperature PECVD deposited Silicon Nitride grating couplers with high efficiency

We report and demonstrate high efficiency grating couplers on PECVD deposited Silicon Nitride films. The couplers were fabricated on a 400 nm thick film that was embedded in a SiO 2 cladding. The experimentally measured coupling efficiency was −5.6 dB per coupler for gratings on a Silicon substrate...

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Bibliographic Details
Published in2019 Workshop on Recent Advances in Photonics (WRAP) pp. 1 - 3
Main Authors Nambiar, Siddharth, Kumar, Abhai, Kallega, Rakshitha, Ranganath, Praveen, Selvaraja, Shankar K
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.12.2019
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Summary:We report and demonstrate high efficiency grating couplers on PECVD deposited Silicon Nitride films. The couplers were fabricated on a 400 nm thick film that was embedded in a SiO 2 cladding. The experimentally measured coupling efficiency was −5.6 dB per coupler for gratings on a Silicon substrate and −2.58 dB per coupler for gratings with a bottom Bragg reflector. The reported efficiencies are comparable to similarly deposited stacks using LPCVD based processes.
DOI:10.1109/WRAP47485.2019.9013733