High Power, High Efficiency, AlGaN/GaN HEMT Technology for Wireless Base Station Applications

We report AlGaN/GaN high-electron-mobility-transistors (HEMT) on SiC substrates with field modulation plates (FP) of various dimensions and different gate widths. As a measure of the status of GaN technology achieved in this work, small periphery 150 μm HEMT demonstrated a continuous wave (CW) outpu...

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Bibliographic Details
Published inIEEE MTT-S International Microwave Symposium Digest, 2005 pp. 487 - 490
Main Authors Vetury, R., Wei, Y., Green, D.S., Gibb, S.R., Mercier, T.W., Leverich, K., Garber, P.M., Poulton, M.J., Shealy, J.B.
Format Conference Proceeding
LanguageEnglish
Published IEEE 17.06.2005
Subjects
Field plate
GaN
HEMT
HEMTs
Power generation
Power measurement
Substrates
Voltage measurement
WCDMA
Wide band gap semiconductors
Wireless communication
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Summary:We report AlGaN/GaN high-electron-mobility-transistors (HEMT) on SiC substrates with field modulation plates (FP) of various dimensions and different gate widths. As a measure of the status of GaN technology achieved in this work, small periphery 150 μm HEMT demonstrated a continuous wave (CW) output power density of 22.7 W/mm at 2.14 GHz with power added efficiency (PAE) of 54% when biased at a drain-source voltage (VDS) of 80 V. As a demonstration of the scalability of this technology, a 20-mm-wide device exhibited 100 W CW output power and a simultaneous peak PAE of 55.3% at 2.14 GHz when biased at class AB and V Ds =48V. WCDMA measurements on the 20mm part demonstrated ACP of −35 dBc at 42.5 dBm output power and 30% PAE under the same bias condition. Analysis of FP related performance tradeoffs are also presented in this work.
ISBN:9780780388451
0780388453
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2005.1516636