Dielectric less capacitive MEMS switches

• Published in: 2004 IEEE MTT-S International Microwave Symposium Vol. 2; pp. 573 - 576 Vol.2
• Main Authors: Blondy, P., Crunteanu, A., Champeaux, C., Catherinot, A., Tristant, P., Vendier, O., Cazaux, J.L., Marchand, L.
• Format: Conference Proceeding
• Language: English
• Published: Piscataway NJ IEEE 2004
• Subjects: Applied sciences; Circuit properties; Contacts; Dielectric devices; Dielectric loss measurement; Electric, optical and optoelectronic circuits; Electrodes; Electronic circuits; Electronics; Exact sciences and technology; Fabrication; Micro- and nanoelectromechanical devices (mems/nems); Microswitches; Radiofrequency microelectromechanical systems; Resists; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Switches; Switching, multiplexing, switched capacity circuits; Voltage; Performance evaluation; Dielectric charge; Charge carrier trapping; Selector switch; Failures; Microelectromechanical device
• ISBN: 0780383311; 9780780383319
• ISSN: 0149-645X
• DOI: 10.1109/MWSYM.2004.1336046

This paper presents the fabrication and experimental results on a capacitive switch without dielectric. Using an appropriate design of the switch, acceptable performances have been obtained with Con/Coff ratio around 10. The key advantage of this switch is that dielectric charge trapping related failure modes are eliminated. An example is shown with measured intrinsic loss less than 0.3 dB at 15 GHz and isolation better than 15 dB at the same frequency.