Effects of the local field and inherent deformation in reflectance anisotropy spectra of AIIIBV semiconductor surfaces

• Published in: Physica status solidi. B. Basic research Vol. 247; no. 8; pp. 1932 - 1936
• Main Authors: Berkovits, V. L., Gordeeva, A. B., Kosobukin, V. A.
• Format: Journal Article Conference Proceeding
• Language: English; Russian
• Published: Berlin WILEY-VCH Verlag 01.08.2010; WILEY‐VCH Verlag; Wiley-VCH
• Subjects: III-V semiconductors; reflection anisotropy spectroscopy; surfaces and interfaces
• ISSN: 0370-1972; 1521-3951
• DOI: 10.1002/pssb.200983921

Reflectance anisotropy (RA) spectra of naturally oxidized GaAs(001) and InAs(001) surfaces reveal features that differ qualitatively from those caused by reconstruction of clean surfaces or surface electric fields of the crystals. We show that the observed RA spectra of the semiconductor/oxide systems are simultaneously influenced by interface and near‐surface anisotropies whose physical origins are different. The interface anisotropy is associated with anisotropic polarizability of the valence bonds belonging to a monatomic layer of excess As atoms occurring between the crystal and oxide. The near‐surface anisotropy is due to uniaxial strain of a near‐surface region of the crystals.