Structural and optical properties of (In,Ga)2O3 thin films and characteristics of Schottky contacts thereon
We report on structural and optical properties of a (InxGa )2O3 thin film having a monotonic lateral variation of the indium content x ( ). The growth condition for each In content is similar allowing precise determination of the dependence of material properties on x. For low In content ( ) the thi...
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Published in | Semiconductor science and technology Vol. 30; no. 2 |
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Main Authors | , , , , , , , |
Format | Journal Article |
Language | English |
Published |
IOP Publishing
01.02.2015
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Subjects | |
Online Access | Get full text |
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Summary: | We report on structural and optical properties of a (InxGa )2O3 thin film having a monotonic lateral variation of the indium content x ( ). The growth condition for each In content is similar allowing precise determination of the dependence of material properties on x. For low In content ( ) the thin film has monoclinic crystal structure; for highest In contents ( ) the cubic bixbyite phase is predominant. For intermediate alloying we observe additionally the rhombohedral InGaO3(II) crystallographic phase. The optical band-gap decreases systematically with increasing indium content and has a linear dependency on x for parts of the sample having the monoclinic phase, only. Further, properties of Pt Schottky diodes are reported for monoclinic (InxGa )2O3 and photo response measurements for |
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ISSN: | 0268-1242 1361-6641 |
DOI: | 10.1088/0268-1242/30/2/024005 |