Structural and optical properties of (In,Ga)2O3 thin films and characteristics of Schottky contacts thereon

We report on structural and optical properties of a (InxGa )2O3 thin film having a monotonic lateral variation of the indium content x ( ). The growth condition for each In content is similar allowing precise determination of the dependence of material properties on x. For low In content ( ) the thi...

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Bibliographic Details
Published inSemiconductor science and technology Vol. 30; no. 2
Main Authors Wenckstern, H von, Splith, D, Purfürst, M, Zhang, Z, Kranert, Ch, Müller, S, Lorenz, M, Grundmann, M
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.02.2015
Subjects
(In.Ga)2O3
continuous composition spread
gallium oxide
indium oxide
photo-detector
pulsed-laser deposition
Schottky diode
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Summary:We report on structural and optical properties of a (InxGa )2O3 thin film having a monotonic lateral variation of the indium content x ( ). The growth condition for each In content is similar allowing precise determination of the dependence of material properties on x. For low In content ( ) the thin film has monoclinic crystal structure; for highest In contents ( ) the cubic bixbyite phase is predominant. For intermediate alloying we observe additionally the rhombohedral InGaO3(II) crystallographic phase. The optical band-gap decreases systematically with increasing indium content and has a linear dependency on x for parts of the sample having the monoclinic phase, only. Further, properties of Pt Schottky diodes are reported for monoclinic (InxGa )2O3 and photo response measurements for
ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/30/2/024005