Fabrication of NbN/SiNx:H/SiO2 membrane structures for study of heat conduction at low temperatures

Here we report on the development of NbN/SiNx:H/SiO2-membrane structures for investigation of the thermal transport at low temperatures. Thin NbN films are known to be in the regime of a strong electron-phonon coupling, and one can assume that the phononic and electronic baths in the NbN are in loca...

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Bibliographic Details
Published inJournal of physics. Conference series Vol. 1695; no. 1
Main Authors Titova, N A, Baeva, E M, Kardakova, A I, Goltsman, G N
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.12.2020
Subjects
Acoustic insulation
Conduction heating
Conductive heat transfer
Low temperature
Membrane structures
Membranes
Niobium nitride
Physics
Silicon dioxide
Substrates
Thermal relaxation
Thermal resistance
Thin films
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Summary:Here we report on the development of NbN/SiNx:H/SiO2-membrane structures for investigation of the thermal transport at low temperatures. Thin NbN films are known to be in the regime of a strong electron-phonon coupling, and one can assume that the phononic and electronic baths in the NbN are in local equilibrium. In such case, the cooling of the NbN-based devices strongly depends on acoustic matching to the substrate and substrate thermal characteristics. For the insulating membrane much thicker than the NbN film, our preliminary results demonstrate that the membrane serves as an additional channel for the thermal relaxation of the NbN sample. That implies a negligible role of thermal boundary resistance of the NbN-SiNx:H interface in comparison with the internal thermal resistance of the insulating membrane.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/1695/1/012190