Investigation of image placement errors in extreme ultraviolet lithography masks

Extreme Ultraviolet Lithography (EUVL) is one of the principal carriers for the IC production at sub-45 nm technology nodes. One of the key problems to be solved before EUVL can be commercialized is the control of the image placement errors during the EUVL mask fabrication. In this paper, EUVL mask...

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Bibliographic Details
Published inInternational Conference on Advanced Technology of Design and Manufacture (ATDM 2010) pp. 293 - 296
Main Author Liang Zheng
Format Conference Proceeding
LanguageEnglish
Published Stevenage IET 2010
Subjects
Integrated circuits
Lithography (semiconductor technology)
Semiconductor integrated circuits
extreme ultraviolet lithography masks
ultraviolet lithography
e-beam tool
exposure tool chucking
masks
EUVL mask fabrication
electrostatic chuck
image placement errors
EUVL mask fabrication process
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ISBN9781849192385
1849192383
DOI10.1049/cp.2010.1309

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Summary:Extreme Ultraviolet Lithography (EUVL) is one of the principal carriers for the IC production at sub-45 nm technology nodes. One of the key problems to be solved before EUVL can be commercialized is the control of the image placement errors during the EUVL mask fabrication. In this paper, EUVL mask fabrication process has been analyzed and the image placement errors induced during the EUVL mask fabrication process were investigated. With the implementation of an electrostatic chuck at both e-beam tool and exposure tool chucking, the image placement errors due to the mask fabrication can be well controlled.
ISBN:9781849192385
1849192383
DOI:10.1049/cp.2010.1309