Phase-Change Memory using Cu2GeTe3 and Multiple Writing Technique for Neuromorphic Systems

A phase-change memory (PCM) using Cu 2 GeTe 3 (CGT) and multiple writing technique have been developed for neuromorphic systems. First, the PCM using CGT is fabricated. Next, the single writing technique as a conventional technique is tried, but reproducible operation is required. Therefore, the mul...

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Bibliographic Details
Published in2023 IEEE International Conference on Consumer Electronics (ICCE) pp. 1 - 5
Main Authors Akane, Shihori, Horiuchi, Isao, Hiroshima, Yasushi, Nakashima, Yasuhiko, Kimura, M.
Format Conference Proceeding
LanguageEnglish
Published IEEE 06.01.2023
Subjects
Associative memory
Consumer electronics
Cu2GeTe3 (CGT)
multiple writing technique
neuromorphic system
Neuromorphics
Phase change materials
Phase change memory
phase-change memory (PCM)
Reliability
Writing
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Summary:A phase-change memory (PCM) using Cu 2 GeTe 3 (CGT) and multiple writing technique have been developed for neuromorphic systems. First, the PCM using CGT is fabricated. Next, the single writing technique as a conventional technique is tried, but reproducible operation is required. Therefore, the multiple writing technique for reliable operation is proposed, and it is confirmed that the multiple RESET pulses contribute to it. Finally, the associative memory function by the neuromorphic system is validated.
ISSN:2158-4001
DOI:10.1109/ICCE56470.2023.10043395