Impact of Excess Carbon at the 3C-SiC/SiO2 Interface Using LPCVD-Based Alternating Supply Deposition

We present for the first time alternative supply deposition (ASD) for the synthetization of polycrystalline 3C-SiC on Si/SiO 2 substrates, thus representing an alternative route to silicon carbide on insulator (SiCOI). For this purpose, we investigated the differences in microstructure and electrica...

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Bibliographic Details
Published in2024 IEEE 37th International Conference on Micro Electro Mechanical Systems (MEMS) pp. 606 - 609
Main Authors Moll, Philipp, Pfusterschmied, Georg, Schmid, Ulrich
Format Conference Proceeding
LanguageEnglish
Published IEEE 21.01.2024
Subjects
3C-SiC
Carbon
Carbonization step
Conductivity
Film resistivity
LPCVD
Micromechanical devices
Microstructure
Silicon
Silicon carbide
SiO 2 -interface
Substrates
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Summary:We present for the first time alternative supply deposition (ASD) for the synthetization of polycrystalline 3C-SiC on Si/SiO 2 substrates, thus representing an alternative route to silicon carbide on insulator (SiCOI). For this purpose, we investigated the differences in microstructure and electrical performance depending on whether a carbonization step (CS) is included or not. In comparison to 3C-SiC thin films deposited on pure Si with the same parameters we found an inhibited growth per cycle of 37 % on SiO 2 . For thin films grown on SiO 2 without a CS we measured film resistivity values of ~6600 Ω*cm being four orders of magnitude higher, than those with a CS. High-resolution TEM images of the 3C-SiC/Si interface revealed the presence of an amorphous carbon layer, decreasing the overall 3C-SiC film resistivity.
ISSN:2160-1968
DOI:10.1109/MEMS58180.2024.10439413