Smoothing gate capacitance models for CMOS radio frequency and microwave integrated circuits CAD

Convergence problems for both voltage- and charge-controlled models of MOSFET gate capacitances are often a limiting factor of CAD tools. In paper, an idea of exponential smoothing of model discontinuities is proposed. The method is demonstrated by smoothing the discontinuity of Meyer's model a...

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Bibliographic Details
Published in2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280) pp. 495 - 498
Main Author Dobes, J.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2002
Subjects
Capacitance
CMOS integrated circuits
Convergence
Integrated circuit modeling
Microwave integrated circuits
Radio frequency
Radiofrequency integrated circuits
Semiconductor device modeling
Smoothing methods
Voltage
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Summary:Convergence problems for both voltage- and charge-controlled models of MOSFET gate capacitances are often a limiting factor of CAD tools. In paper, an idea of exponential smoothing of model discontinuities is proposed. The method is demonstrated by smoothing the discontinuity of Meyer's model at zero drain-source voltage. The updated model is tested on flip-flop circuit by an advanced algorithm.
ISBN:0780372468
9780780372467
ISSN:1529-2517
2375-0995
DOI:10.1109/RFIC.2002.1012100