A Fully Integrated Concurrent Dual-Band Low Noise Amplifier with Suspended Inductors in SiGe 0.35 μm BiCMOS Technology

A fully integrated concurrent dual-band low noise amplifier with suspended inductors is first reported. A new approach is proposed for input impedance matching at multiple frequencies concurrently. The experimental results showed that input return losses of 12.8 and 11.5 dB, voltage gains of 14.4 an...

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Bibliographic Details
Published in2007 IEEE International Symposium on Circuits and Systems (ISCAS) pp. 425 - 428
Main Authors Lin, Yu-Tso, Wang, Tao, Lu, Shey-Shi
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2007
Subjects
BiCMOS integrated circuits
Dual band
Energy consumption
Germanium silicon alloys
Impedance matching
Inductors
LNA
Low-noise amplifiers
Noise figure
Silicon germanium
suspended
Voltage
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Summary:A fully integrated concurrent dual-band low noise amplifier with suspended inductors is first reported. A new approach is proposed for input impedance matching at multiple frequencies concurrently. The experimental results showed that input return losses of 12.8 and 11.5 dB, voltage gains of 14.4 and 14.3 dB and noise figures of 2.5 and 3.0 dB were obtained at 2.3 GHz and 4.5 GHz, respectively, with an image rejection ratio of 26.1dB and power consumption of 11.9 mW. It is found that voltage gains, noise figures and image rejection ratio are improved due to the use of suspended inductors with same power consumption.
ISBN:1424409209
9781424409204
ISSN:0271-4302
2158-1525
DOI:10.1109/ISCAS.2007.378554