The example of circuit analysis to assist 2nd-generation hot spot for the failure localization

Hotspot localization in the chip is the common and effective methodology in the Semiconductor Failure Analysis (FA), However, we often cannot proceed in the successful Physical Failure Analysis (PFA) via the first-generation hot spots. In the paper, we show one example with assistance of circuit ana...

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Bibliographic Details
Published inProceedings of the 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) pp. 633 - 636
Main Authors Shouzhu Guo, Pan, Andrew, Mingjie Xu, Sun, Tommy, Li-Lung Lai
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.07.2013
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Summary:Hotspot localization in the chip is the common and effective methodology in the Semiconductor Failure Analysis (FA), However, we often cannot proceed in the successful Physical Failure Analysis (PFA) via the first-generation hot spots. In the paper, we show one example with assistance of circuit analysis to perform the effectively physical fault isolation. We identified the issue of capacitor using negative charging Voltage Contrast (VC) in the following PFA process. The confirmed failure mechanism is demonstrated.
ISBN:9781479912414
1479912417
ISSN:1946-1542
1946-1550
DOI:10.1109/IPFA.2013.6599240