The example of circuit analysis to assist 2nd-generation hot spot for the failure localization
Hotspot localization in the chip is the common and effective methodology in the Semiconductor Failure Analysis (FA), However, we often cannot proceed in the successful Physical Failure Analysis (PFA) via the first-generation hot spots. In the paper, we show one example with assistance of circuit ana...
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Published in | Proceedings of the 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) pp. 633 - 636 |
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Main Authors | , , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
01.07.2013
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Subjects | |
Online Access | Get full text |
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Summary: | Hotspot localization in the chip is the common and effective methodology in the Semiconductor Failure Analysis (FA), However, we often cannot proceed in the successful Physical Failure Analysis (PFA) via the first-generation hot spots. In the paper, we show one example with assistance of circuit analysis to perform the effectively physical fault isolation. We identified the issue of capacitor using negative charging Voltage Contrast (VC) in the following PFA process. The confirmed failure mechanism is demonstrated. |
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ISBN: | 9781479912414 1479912417 |
ISSN: | 1946-1542 1946-1550 |
DOI: | 10.1109/IPFA.2013.6599240 |