Memory properties of GeZrO2 based trilayer structure

• Published in: 2021 International Semiconductor Conference (CAS) pp. 253 - 256
• Main Authors: Palade, C., Slav, A., Ciurea, M. L.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 06.10.2021
• Subjects: frequency dependence; Ge nanocrystals; Germanium; Lattices; Magnetic separation; memory properties; Nanocrystals; Rapid thermal annealing; Silicon compounds; X-ray diffraction; ZrO 2 matrix
• ISSN: 2377-0678
• DOI: 10.1109/CAS52836.2021.9604154

The memory properties of a trilayer structure of ZrO 2 /Ge-ZrO 2 /ZrO 2 /Si-p were investigated. The trilayer was prepared by magnetron sputtering deposition followed by a rapid thermal annealing process for obtaining Ge nanocrystals embedded in ZrO 2 matrix. The X-ray diffraction patterns obtained on annealed structures show that both trilayer structures are cristallized, with narrow diffraction peaks. Ge as a separated phase is not evidenced in the diffractograms, instead is possible that Ge atoms enters in ZrO 2 lattice structure and form a compound of ZrO 3 GeO 8 crystallized in the tetragonal phase. In the case of ZrO 2 control structure, the diffractograms show that the ZrO 2 layer is crystallized in tetragonal phase. The memory properties are evidenced by C-V characteristics with counterclockwise hysteresis loop and a memory window of ΔV= 1.1V for the structure annealed at 570 °C and ΔV= 0.8 V for the structure annealed at 650 °C. The influence of the interface SiO 2 layer on the frequency dependence of capacitance was evidenced by C-f characteristics.