Design of radio frequency metal-insulator-metal (MIM) capacitors

RF components such as inductors and capacitors are now common on deep submicron CMOS circuits because of their low cost and reasonable performance. The performance however depends on the design of those components. In this paper, we propose guidelines for improving the high frequency capacitance and...

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Bibliographic Details
Published inProceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004 Vol. 1; pp. 209 - 212 vol.1
Main Authors Goh, M.W.C., Lim, Q., Keating, R.A., Kordesch, A.V., Bin Mohd Yusof, Y.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2004
Subjects
Circuits
Computational Intelligence Society
Costs
Inductors
Metal-insulator structures
MIM capacitors
Parasitic capacitance
Q factor
Radio frequency
Titanium
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Summary:RF components such as inductors and capacitors are now common on deep submicron CMOS circuits because of their low cost and reasonable performance. The performance however depends on the design of those components. In this paper, we propose guidelines for improving the high frequency capacitance and quality factor, Q, of integrated capacitors. We present measured data showing how the quality factor is improved when the number of vias is increased.
ISBN:078038511X
9780780385115
DOI:10.1109/ICSICT.2004.1434989