Design of radio frequency metal-insulator-metal (MIM) capacitors
RF components such as inductors and capacitors are now common on deep submicron CMOS circuits because of their low cost and reasonable performance. The performance however depends on the design of those components. In this paper, we propose guidelines for improving the high frequency capacitance and...
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Published in | Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004 Vol. 1; pp. 209 - 212 vol.1 |
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Main Authors | , , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
2004
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Subjects | |
Online Access | Get full text |
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Summary: | RF components such as inductors and capacitors are now common on deep submicron CMOS circuits because of their low cost and reasonable performance. The performance however depends on the design of those components. In this paper, we propose guidelines for improving the high frequency capacitance and quality factor, Q, of integrated capacitors. We present measured data showing how the quality factor is improved when the number of vias is increased. |
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ISBN: | 078038511X 9780780385115 |
DOI: | 10.1109/ICSICT.2004.1434989 |