A Study of Blister Control of AL2O3 Thin Film Deposited by Plasma-assisted Atomic Layer Deposition after Firing Process

Al 2 O 3 was deposited by RF plasma-assisted atomic layer deposition method. Al 2 O 3 thin films having various OH group density were fabricated. These Al 2 O 3 thin films were characterized by quasi-steady state photoconductance decay method, X-ray photoelectron spectroscopy, optical microscopy and...

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Published in2017 IEEE 44th Photovoltaic Specialist Conference (PVSC) pp. 356 - 358
Main Authors Gu Kang, Min, In Lee, Jeong, Song, Hee-Eun, Sang Jeong, Myeong, Taek Jeong, Kyung, Sik Chang, Hyo
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2017
Subjects
Aluminum oxide
Annealing
Hydrogen
Passivation
Radio frequency
Silicon
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Summary:Al 2 O 3 was deposited by RF plasma-assisted atomic layer deposition method. Al 2 O 3 thin films having various OH group density were fabricated. These Al 2 O 3 thin films were characterized by quasi-steady state photoconductance decay method, X-ray photoelectron spectroscopy, optical microscopy and capacitance-voltage characterization. The blisters were observed at the samples having low passivation properties after firing process. These samples had high OH group density and reducing OH group could suppress degrading passivation quality.
DOI:10.1109/PVSC.2017.8366608