Optimal ramped-gate soft programming of over-erased flash EEPROM cells at given current
Presented herein is an efficient simulation technique enabling systematic investigation of the soft programming over-erased flash EEPROM cells. The simulation provides a method by which to find the optimal soft programming technique for given current. The method requires only the cell performance da...
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Published in | Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004 Vol. 1; pp. 703 - 706 vol.1 |
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Main Authors | , , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
2004
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Subjects | |
Online Access | Get full text |
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Summary: | Presented herein is an efficient simulation technique enabling systematic investigation of the soft programming over-erased flash EEPROM cells. The simulation provides a method by which to find the optimal soft programming technique for given current. The method requires only the cell performance data and allows investigation of the soft programming under various bias conditions. In principle, the methodology can also be used to investigate the programming and erase operations. |
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ISBN: | 078038511X 9780780385115 |
DOI: | 10.1109/ICSICT.2004.1435100 |