Optimal ramped-gate soft programming of over-erased flash EEPROM cells at given current

Presented herein is an efficient simulation technique enabling systematic investigation of the soft programming over-erased flash EEPROM cells. The simulation provides a method by which to find the optimal soft programming technique for given current. The method requires only the cell performance da...

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Bibliographic Details
Published inProceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004 Vol. 1; pp. 703 - 706 vol.1
Main Authors Wu-yun Quan, Chang-Ki Baek, Kim, D.M., Ruan Gang, Yiping Huang
Format Conference Proceeding
LanguageEnglish
Published IEEE 2004
Subjects
Boosting
Charge pumps
Computational modeling
Computer science
EPROM
Microelectronics
Performance evaluation
Testing
Threshold voltage
Voltage control
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Summary:Presented herein is an efficient simulation technique enabling systematic investigation of the soft programming over-erased flash EEPROM cells. The simulation provides a method by which to find the optimal soft programming technique for given current. The method requires only the cell performance data and allows investigation of the soft programming under various bias conditions. In principle, the methodology can also be used to investigate the programming and erase operations.
ISBN:078038511X
9780780385115
DOI:10.1109/ICSICT.2004.1435100