Doping of Direct Gap Ge1-ySny Alloys to Attain Electroluminescence and Enhanced Photoluminescence

Low temperature (T < 300°C) in-situ doping protocols were developed for Ge1-ySny alloys with compositions above the indirect-to-direct gap crossover point, which were deposited using CVD. Trisilylphosphine (P(SiH3)3) was used as the n-type dopant source while diborane (B2H6) was used for n-type d...

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Published inECS transactions Vol. 69; no. 14; pp. 157 - 164
Main Authors Senaratne, Charutha Lasitha, Gallagher, James Dennis, Xu, Chi, Sims, Patrick, Menendez, Jose, Kouvetakis, John
Format Journal Article
LanguageEnglish
Published The Electrochemical Society, Inc 16.09.2015
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Abstract Low temperature (T < 300°C) in-situ doping protocols were developed for Ge1-ySny alloys with compositions above the indirect-to-direct gap crossover point, which were deposited using CVD. Trisilylphosphine (P(SiH3)3) was used as the n-type dopant source while diborane (B2H6) was used for n-type doping. This enabled the fabrication of pin diode structures with compositions up to y = 0.137. These photodiodes exhibit electroluminescence at wavelengths up to 2700 nm. Furthermore, it was demonstrated that n-type doping enhances the photoluminescence obtained from these materials.
AbstractList Low temperature (T < 300°C) in-situ doping protocols were developed for Ge1-ySny alloys with compositions above the indirect-to-direct gap crossover point, which were deposited using CVD. Trisilylphosphine (P(SiH3)3) was used as the n-type dopant source while diborane (B2H6) was used for n-type doping. This enabled the fabrication of pin diode structures with compositions up to y = 0.137. These photodiodes exhibit electroluminescence at wavelengths up to 2700 nm. Furthermore, it was demonstrated that n-type doping enhances the photoluminescence obtained from these materials.
Author Gallagher, James Dennis
Xu, Chi
Sims, Patrick
Kouvetakis, John
Menendez, Jose
Senaratne, Charutha Lasitha
Author_xml – sequence: 1
  givenname: Charutha Lasitha
  surname: Senaratne
  fullname: Senaratne, Charutha Lasitha
  organization: Dept. of Chemistry and Biochemistry, Arizona State Univ
– sequence: 2
  givenname: James Dennis
  surname: Gallagher
  fullname: Gallagher, James Dennis
  organization: Department of Physics, Arizona State Univ
– sequence: 3
  givenname: Chi
  surname: Xu
  fullname: Xu, Chi
  organization: Department of Physics, Arizona State Univ
– sequence: 4
  givenname: Patrick
  surname: Sims
  fullname: Sims, Patrick
  organization: Dept. of Chemistry and Biochemistry, Arizona State Univ
– sequence: 5
  givenname: Jose
  surname: Menendez
  fullname: Menendez, Jose
  organization: Department of Physics, Arizona State Univ
– sequence: 6
  givenname: John
  surname: Kouvetakis
  fullname: Kouvetakis, John
  organization: Dept. of Chemistry and Biochemistry, Arizona State Univ
BookMark eNpVkM9LwzAYhoNMcJtePecsdH5f0yTNsWy1CgMFdy9ZmriOmow2O_S_t-o8eHofeL8f8CzIzAdvCblHWCFm6hGEwmwFyKU1Q7wic1QsT4RkcnZhnov0hiyG4Qggph05J3oTTq3_oMHRTdtbE2mlT7SymIzvfqRF14VxoDHQIkbdelp200wfuvNn6-1grDeWat_Q0h_0xA19O4T4r74l1053g7275JLsnsrd-jnZvlYv62KbtAg8JlI53jQpspw7wff7VIHJQEkhJVfOpQat5pgqLgEgA4aGWaWEy4RTkHK2JA-_Z9twqo_h3PvpWY1Qf7upf9zUf27YF7OwWOs
ContentType Journal Article
Copyright 2015 ECS - The Electrochemical Society
Copyright_xml – notice: 2015 ECS - The Electrochemical Society
DOI 10.1149/06914.0157ecst
DatabaseTitleList
DeliveryMethod fulltext_linktorsrc
Discipline Chemistry
EISSN 1938-6737
EndPage 164
ExternalDocumentID 10.1149/06914.0157ecst
GroupedDBID 0R~
29G
AATNI
ABDNZ
ABJNI
ACHIP
ADNWM
AKPSB
ALMA_UNASSIGNED_HOLDINGS
AOAED
ATQHT
CJUJL
EBS
EJD
H13
IOP
JGOPE
KOT
MV1
N5L
NFQFE
REC
RHI
RNS
ROL
RPA
ID FETCH-LOGICAL-i105t-79f5dd21385f65bb290c409767759ff2c1ea5129570004031c3e996f46f90253
IEDL.DBID IOP
ISSN 1938-5862
IngestDate Wed Aug 21 03:33:13 EDT 2024
IsPeerReviewed false
IsScholarly true
Issue 14
Language English
LinkModel DirectLink
MergedId FETCHMERGED-LOGICAL-i105t-79f5dd21385f65bb290c409767759ff2c1ea5129570004031c3e996f46f90253
PageCount 8
ParticipantIDs iop_journals_10_1149_06914_0157ecst
PublicationCentury 2000
PublicationDate 20150916
PublicationDateYYYYMMDD 2015-09-16
PublicationDate_xml – month: 09
  year: 2015
  text: 20150916
  day: 16
PublicationDecade 2010
PublicationTitle ECS transactions
PublicationTitleAlternate ECS Trans
PublicationYear 2015
Publisher The Electrochemical Society, Inc
Publisher_xml – name: The Electrochemical Society, Inc
SSID ssj0061147
Score 2.0735977
Snippet Low temperature (T < 300°C) in-situ doping protocols were developed for Ge1-ySny alloys with compositions above the indirect-to-direct gap crossover point,...
SourceID iop
SourceType Publisher
StartPage 157
Title Doping of Direct Gap Ge1-ySny Alloys to Attain Electroluminescence and Enhanced Photoluminescence
URI https://iopscience.iop.org/article/10.1149/06914.0157ecst
Volume 69
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV1LS8NAEF60HvTiW3yzoNeN2WeSY6m1VVALViheQjbZ0GJJit0e6q93N5tA1Yt4C-yEHYbMzLfZmW8AuM4YlkRIioTwM8QUEUiatIQimaYyVDj0E9s7_Pgk-q_sYcRHK6O-JuWsDv2eeXREwc6ENbFtdOOLCDPPpLFApXO9DjaocRR77rp_HjRBWBjJwF0o28YiQWq-xt_vm5xiNlrJKXc74K3RxpWSvHsLLb308wdR47_U3QXbNdKEbSe4B9ZUsQ82O82AtwOQ3FbNUrDMoQt8sJfMYE9htHwplrA9nZbLOdQlbGv7_wB23cQcE81sqXxq1YFJkcFuMa7KCOBgXOpvy4dgeNcddvqonriAJgZnaRREOc8ygmnIc8GlJJGfWkIsEQQ8ynOSYpVYhGBJ8Y33U5xSZQ5MORO5va6kR6BVlIU6BpAERBCS41AFGbNAgyWcijCUilPGw-wEXBmDxbXDzGPXHx3FlbXixlqnf5I6A1sGxnBbxYHFOWjpj4W6MFBBy8vqo_gCPru4HA
link.rule.ids 315,783,787,27936,27937,38877,53854
linkProvider IOP Publishing
linkToPdf http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV1bS8MwFA46QX3xLt4N6Gu6JU3S9nHs7mUOnLC30jQJE0c7bPcwf71J24GXF_GtkEMbPpJzvjTnfAeAW0mxIFy4iPOGRFQRjoQJSygQcSx8hf1GZGuHH4e8_0LvJmxS5eYUtTDpvHL9jnkshYJLCCth26De4AGmjgljnoqzvD6Xeh1smH3LrHT-4Gm0csTcWHvlpbItLuKk0mz8_Q4TV8zHvsSV7m7ZPDUr5AhtOsmbs8iFE3_8EGv895T3wE7FOGGzNN4Hayo5AFutVaO3QxC1i6IpmGpYOkDYi-awpzBaPidL2JzN0mUG8xQ2c_sfAXbKzjnGq9mU-dhOCUaJhJ1kWqQTwNE0zb8NH4FxtzNu9VHVeQG9Gr6VIy_QTEqCDaiaMyFI0IitMBb3PBZoTWKsIssUrDi-8QIujl1lDk6acm2vLd1jUEvSRJ0ASDzCCdHYV56klnDQiLnc94ViLmW-PAU3BrSw2jhZWNZJB2GBWLhC7OxPVtdgc9Tuhg-D4f052DbMhtnEDswvQC1_X6hLwx5ycVWskU8pQb18
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Doping+of+Direct+Gap+Ge1-ySny+Alloys+to+Attain+Electroluminescence+and+Enhanced+Photoluminescence&rft.jtitle=ECS+transactions&rft.au=Senaratne%2C+Charutha+Lasitha&rft.au=Gallagher%2C+James+Dennis&rft.au=Xu%2C+Chi&rft.au=Sims%2C+Patrick&rft.date=2015-09-16&rft.pub=The+Electrochemical+Society%2C+Inc&rft.issn=1938-5862&rft.eissn=1938-6737&rft.volume=69&rft.issue=14&rft.spage=157&rft.epage=164&rft_id=info:doi/10.1149%2F06914.0157ecst&rft.externalDocID=10.1149%2F06914.0157ecst
thumbnail_l http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=1938-5862&client=summon
thumbnail_m http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=1938-5862&client=summon
thumbnail_s http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=1938-5862&client=summon