Doping of Direct Gap Ge1-ySny Alloys to Attain Electroluminescence and Enhanced Photoluminescence

Low temperature (T < 300°C) in-situ doping protocols were developed for Ge1-ySny alloys with compositions above the indirect-to-direct gap crossover point, which were deposited using CVD. Trisilylphosphine (P(SiH3)3) was used as the n-type dopant source while diborane (B2H6) was used for n-type d...

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Bibliographic Details
Published inECS transactions Vol. 69; no. 14; pp. 157 - 164
Main Authors Senaratne, Charutha Lasitha, Gallagher, James Dennis, Xu, Chi, Sims, Patrick, Menendez, Jose, Kouvetakis, John
Format Journal Article
LanguageEnglish
Published The Electrochemical Society, Inc 16.09.2015
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Summary:Low temperature (T < 300°C) in-situ doping protocols were developed for Ge1-ySny alloys with compositions above the indirect-to-direct gap crossover point, which were deposited using CVD. Trisilylphosphine (P(SiH3)3) was used as the n-type dopant source while diborane (B2H6) was used for n-type doping. This enabled the fabrication of pin diode structures with compositions up to y = 0.137. These photodiodes exhibit electroluminescence at wavelengths up to 2700 nm. Furthermore, it was demonstrated that n-type doping enhances the photoluminescence obtained from these materials.
ISSN:1938-5862
1938-6737
DOI:10.1149/06914.0157ecst