Monolithically Integrated SiGe Push-Push Oscillators in the Frequency Range 50-190 GHz

In this paper we present several monolithically integrated push-push oscillators in the frequency range from 47 GHz to 190 GHz. The MMICs are fabricated in a production near SiGe:C bipolar technology developed by Infineon Technologies AG. The transistors show a maximum transit frequency of f T =200...

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Bibliographic Details
Published in2006 IEEE Ninth International Symposium on Spread Spectrum Techniques and Applications pp. 26 - 30
Main Authors Wanner, R., Lachner, R., Olbrich, G.R.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.08.2006
Subjects
Frequency
Germanium silicon alloys
Integrated circuit technology
MMICs
Oscillators
Phase noise
Production
Silicon germanium
Spirals
Transmission lines
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Summary:In this paper we present several monolithically integrated push-push oscillators in the frequency range from 47 GHz to 190 GHz. The MMICs are fabricated in a production near SiGe:C bipolar technology developed by Infineon Technologies AG. The transistors show a maximum transit frequency of f T =200 GHz and a maximum frequency of oscillation f max =275 GHz. The passive circuitry is realized using integrated transmission-line components, integrated spiral inductors, MIM-capacitors and TaN resistors. The frequency of the output signal of the oscillators can be tuned either by varying the bias voltage of the whole oscillator circuit or using the capacitance variation of a base collector junction as a tuning varactor. Some of the oscillators show excellent phase noise behavior, especially the 190 GHz oscillator gives a world record in output power and phase noise for HBT-oscillators
ISBN:0780397797
9780780397798
ISSN:1943-7439
DOI:10.1109/ISSSTA.2006.311727