Solid state switches in bipolar (thyristor) and BIMOS (IGBT) technology for repetitive pulse applications

• Published in: Digest of Technical Papers. PPC-2003. 14th IEEE International Pulsed Power Conference (IEEE Cat. No.03CH37472) Vol. 1; pp. 353 - 356 Vol.1
• Main Authors: Welleman, A., Fleischmann, W.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 2003
• Subjects: Assembly; Clamps; Cooling; Frequency; Insulated gate bipolar transistors; Power semiconductor switches; Semiconductor device testing; Solid state circuits; Thyristors; Voltage
• ISBN: 0780379152; 9780780379152
• DOI: 10.1109/PPC.2003.1277727

In this paper solid state switches for repetitive pulse power applications are presented. This includes the design, semiconductor components, clamping, driving, cooling and test results. Designs using bipolar (thyristor) technology and BIMOS (IGBT) technology is shown with the advantages and disadvantages of both technologies. The switch assemblies are using components with blocking capability of up to 4.5 kV and are stacked in series connection to reach higher voltages of up to 40 kV DC. Pulse current capabilities can be in the range from 100 A till over 60 kA, depending on application parameters like pulse repetition frequency and silicon area. A comparison will show the limitations of the bipolar switch-off technology for pulse application above frequencies in kHz range, whereas the press pack IGBT devices can reach over 5 kHz. The switches and tests presented were done on existing and available products and based on volume production technology.