Ag dependence of holographic grating formation in chalcogenide thin films

We have investigated the Ag dependence of holographic grating formation in chalcogenide thin films. Sample was formed by alternating a layer of Ag/As/sub 40/Ge/sub 10/Se/sub 15/S/sub 35/ and As/sub 40/Ge/sub 10/Se/sub 15/S/sub 35//Ag to be increase the photosensitivity. In this study, holographic gr...

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Bibliographic Details
Published inProceedings of the 7th International Conference on Properties and Applications of Dielectric Materials (Cat. No.03CH37417) Vol. 2; pp. 741 - 744 vol.2
Main Authors Cheol Ho Yeo, Jung Tae Lee, Jung Il Park, Yeong Jong Lee, Hong Bay Chung
Format Conference Proceeding
LanguageEnglish
Published IEEE 2003
Subjects
Amorphous materials
Anisotropic magnetoresistance
Diffraction gratings
Holographic optical components
Holography
Optical films
Optical polarization
Optical refraction
Optical sensors
Transistors
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Summary:We have investigated the Ag dependence of holographic grating formation in chalcogenide thin films. Sample was formed by alternating a layer of Ag/As/sub 40/Ge/sub 10/Se/sub 15/S/sub 35/ and As/sub 40/Ge/sub 10/Se/sub 15/S/sub 35//Ag to be increase the photosensitivity. In this study, holographic gratings have been formed using He-Ne laser (632.8 nm) under different polarization combinations (the intensity polarization holography, the phase polarization holography). The diffraction efficiency was obtained by +1st order intensity. As the results, we found the maximum diffraction efficiency in As/sub 40/Ge/sub 10/Se/sub 15/S/sub 35//Ag thin film. Also, the maximum diffraction efficiency of the intensity polarization holography (P:P) is 21%.
ISBN:0780377257
9780780377257
ISSN:1081-7735
2377-5386
DOI:10.1109/ICPADM.2003.1218524