Improvement in Dielectric and Tunable Properties of Fe-Doped Ba0.6Sr0.4TiO3 Thin Films Grown by Pulsed Laser Deposition

Fe-doped Ba 0.6 Sr 0.4 TiO 3 (BST) thin films were prepared on Pt/Si substrates by the pulsed laser deposition method. The concentrations of Fe dopants vary from 0.1 mol% to 1.0 mol%. Our results indicate that a certain amount of Fe dopants can decrease the dielectric loss of BST thin films without...

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Published in2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics pp. 216 - 218
Main Authors Jia Gong, Jinrong Cheng, Weicheng Zhu, Shengwen Yu, Wenbiao Wu, Zhongyan Meng
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2007
Subjects
Binary search trees
Dielectric losses
Dielectric substrates
Dielectric thin films
Iron
Pulsed laser deposition
Semiconductor thin films
Sputtering
Strontium
Tunable circuits and devices
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Summary:Fe-doped Ba 0.6 Sr 0.4 TiO 3 (BST) thin films were prepared on Pt/Si substrates by the pulsed laser deposition method. The concentrations of Fe dopants vary from 0.1 mol% to 1.0 mol%. Our results indicate that a certain amount of Fe dopants can decrease the dielectric loss of BST thin films without causing the significant reduction of the tunability. The leakage current of BST thin films was also reduced by addition of Fe dopants. BST thin films doped with 0.3 mol% Fe ions show a minimum dielectric loss of 0.88 % at 10 Hz, which is 1.7 % for the undoped BST films. Moreover, the 0.3 mol% Fe-doped BST films reveal a maximum figure of merit (FOM) of 51, indicating the improved comprehensive dielectric and tunable properties.
ISBN:1424413338
9781424413331
ISSN:1099-4734
2375-0448
DOI:10.1109/ISAF.2007.4393219