Study of High Performance GeSn Photodetectors with Cutoff Wavelength Up to 3.7 μm for Low-Cost Infrared Imaging

The GeSn photodetectors with Sn compositions up to 22.3% were systematically investigated. The maximum cutoff wavelength of 3.7 μm at 300 K and the peak specific detectivity of 9.5×10 9 cm.Hz 1/2 W −1 at 77 K were achieved with 22.3% and 11.4% Sn devices, respectively. Moreover, the infrared images...

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Published in2019 Conference on Lasers and Electro-Optics (CLEO) pp. 1 - 2
Main Authors Tran, Huong, Pham, Thach, Margetis, Joe, Zhou, Yiyin, Dou, Wei, Grant, Perry C., Grant, Joshua M., Alkabi, Sattar, Du, Wei, Sun, Greg, Soref, Richard A., Tolle, John, Li, Baohua, Mortazavi, Mansour, Yu, Shui-Qing
Format Conference Proceeding
LanguageEnglish
Published OSA 01.05.2019
Subjects
Dark current
Detectors
Distance measurement
Infrared imaging
Photoconducting materials
Photodetectors
Silicon
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Summary:The GeSn photodetectors with Sn compositions up to 22.3% were systematically investigated. The maximum cutoff wavelength of 3.7 μm at 300 K and the peak specific detectivity of 9.5×10 9 cm.Hz 1/2 W −1 at 77 K were achieved with 22.3% and 11.4% Sn devices, respectively. Moreover, the infrared images were captured using Ge 0.89 Sn 0.11 photoconductor at 77 K. © 2019 The Author(s)
DOI:10.1364/CLEO_SI.2019.STh4O.6