High-efficiency single-junction GaAs solar cell using ITO-film as an antireflection and passivation layer deposited on AlInP layer by thermally RF sputtering

This study presents high-efficiency of 23.52% single-junction GaAs solar cell using ITO-film as antireflection and passivation layer deposited by thermally-RF-sputtering. The impressive enhanced in efficiency of 8.94% was obtained, compared to the cell with SiO 2 -film.

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Bibliographic Details
Published in2017 Conference on Lasers and Electro-Optics (CLEO) pp. 1 - 2
Main Authors Jian-Cheng Lin, Wen-Jeng Ho, Jheng-Jie Liu, Shih-Ting Tseng, Cho-Chun Chiang, Bang-Jin You, Yun-Chie Yang, Wen-Bin Bai, Zong-Xian Lin, Hung-Pin Shiao
Format Conference Proceeding
LanguageEnglish
Published The Optical Society 01.05.2017
Subjects
Gallium arsenide
Indium tin oxide
Optical device fabrication
Optical films
Optical reflection
Photovoltaic cells
Reflectivity
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Summary:This study presents high-efficiency of 23.52% single-junction GaAs solar cell using ITO-film as antireflection and passivation layer deposited by thermally-RF-sputtering. The impressive enhanced in efficiency of 8.94% was obtained, compared to the cell with SiO 2 -film.