Arrays of Microplasma-assisted Atomic Layer Deposition and Etching Free Patterning of Ga2O3 Thin Film with Flexible DUV Photodetector

Microplasma arrays assisted atomic layer deposition (MALD) have been used to deposit gallium oxide (Ga 2 O 3 ) thin film on the rigid and flexible substrate in order to fabricate deep-ultraviolet (DUV) photodetector under 254 nm illumination.

Saved in:
Bibliographic Details
Published in2021 Conference on Lasers and Electro-Optics (CLEO) pp. 1 - 2
Main Authors Kim, Jinhong, Mironov, Andrey E., Sievers, Dane J., Park, Sung-Jin, Eden, J. Gary
Format Conference Proceeding
LanguageEnglish
Published OSA 01.05.2021
Subjects
Atom lasers
Atomic layer deposition
Etching
Gallium
Lasers and electrooptics
Lighting
Photodetectors
Online AccessGet full text

Cover

More Information
Summary:Microplasma arrays assisted atomic layer deposition (MALD) have been used to deposit gallium oxide (Ga 2 O 3 ) thin film on the rigid and flexible substrate in order to fabricate deep-ultraviolet (DUV) photodetector under 254 nm illumination.