Decoupling of NBTI and Pure HCD Contributions in p-GAA SNS FETs Under Mixed VG/VD Stress

Ultrafast measurements (with 10μs delay) are done to characterize the Negative Bias Temperature Instability (NBTI) and Hot Carrier Degradation (HCD) induced threshold voltage shift (ΔV T ) in p-channel Gate All Around Stacked Nano-Sheet (GAA-SNS) Field Effect Transistors (FETs). A model framework is...

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Bibliographic Details
Published in2022 IEEE International Reliability Physics Symposium (IRPS) pp. P56-1 - P56-6
Main Authors Choudhury, Nilotpal, Ranjan, Ayush, Mahapatra, Souvik
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.03.2022
Subjects
BTI-HCD decoupling
Field effect transistors
GAA-SNS FET
HCD
Kinetic theory
Logic gates
NBTI
Negative bias temperature instability
recovery
Self Heating
stress
Temperature measurement
Thermal variables control
time kinetics
voltage dependence
Voltage measurement
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Summary:Ultrafast measurements (with 10μs delay) are done to characterize the Negative Bias Temperature Instability (NBTI) and Hot Carrier Degradation (HCD) induced threshold voltage shift (ΔV T ) in p-channel Gate All Around Stacked Nano-Sheet (GAA-SNS) Field Effect Transistors (FETs). A model framework is proposed to estimate the measured ΔV T time kinetics during and after NBTI and HCD stress. The BTI Analysis Tool (BAT) framework is calibrated using pure NBTI data (drain bias, V D , at 0V) across gate bias (V G ) and temperature (T) and is subsequently used to estimate the underlying NBTI contribution during and after HCD stress under full V G /V D space in the presence of Self-Heating (SH) effect. The pure HCD kinetics is calculated using an empirical model, with V G , V D and T dependence incorporated via a vertical field enhanced dominant energy model.
ISSN:1938-1891
DOI:10.1109/IRPS48227.2022.9764529