A highly-linear highly efficient HBT for communications circuits

A Martin Marietta Laboratory heterojunction bipolar transistor, which was fabricated using a base-emitter realigned process to reduce surface recombination, has been load pulled to demonstrate that it is simultaneously highly linear and efficient. Achieving a breakthrough in highly linear C-band com...

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Bibliographic Details
Published inProceedings of 1994 IEEE GaAs IC Symposium pp. 291 - 294
Main Authors Brozovich, R.S., Helms, D.R., Yang, L.W., Komiak, J.J.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1994
Subjects
Batteries
Circuits
Costs
Doping
Fingers
Heterojunction bipolar transistors
Laboratories
Linearity
MESFETs
Radio frequency
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Summary:A Martin Marietta Laboratory heterojunction bipolar transistor, which was fabricated using a base-emitter realigned process to reduce surface recombination, has been load pulled to demonstrate that it is simultaneously highly linear and efficient. Achieving a breakthrough in highly linear C-band communications power amplification, the HBT demonstrated a linearity of 30 dB C/I, typically required by communications systems, with 61% power added efficiency at 6 GHz. When tuned for maximum efficiency it achieved 72% P.A.E.
ISBN:9780780319752
0780319753
ISSN:1064-7775
2379-5638
DOI:10.1109/GAAS.1994.636986