A highly-linear highly efficient HBT for communications circuits
A Martin Marietta Laboratory heterojunction bipolar transistor, which was fabricated using a base-emitter realigned process to reduce surface recombination, has been load pulled to demonstrate that it is simultaneously highly linear and efficient. Achieving a breakthrough in highly linear C-band com...
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Published in | Proceedings of 1994 IEEE GaAs IC Symposium pp. 291 - 294 |
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Main Authors | , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
1994
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Subjects | |
Online Access | Get full text |
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Summary: | A Martin Marietta Laboratory heterojunction bipolar transistor, which was fabricated using a base-emitter realigned process to reduce surface recombination, has been load pulled to demonstrate that it is simultaneously highly linear and efficient. Achieving a breakthrough in highly linear C-band communications power amplification, the HBT demonstrated a linearity of 30 dB C/I, typically required by communications systems, with 61% power added efficiency at 6 GHz. When tuned for maximum efficiency it achieved 72% P.A.E. |
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ISBN: | 9780780319752 0780319753 |
ISSN: | 1064-7775 2379-5638 |
DOI: | 10.1109/GAAS.1994.636986 |